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PD - 94318C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09 IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL REF: MIL-PRF-19500/705 5 TECHNOLOGY ID QPL Part Number 18A* JANSR2N7488T3 International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. T0-257AA Features: n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 12 72 75 0.6 20 80 18 7.5 8.0 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 (0.063in./1.6mm from case for 10sec) 4.3(Typical) g www.irf.com 1 06/10/04 IRHY57133CMSE, JANSR2N7488T3 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 130 -- -- 2.5 8.5 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.16 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.09 4.5 -- 10 25 100 -100 48 16 18 20 70 25 35 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 12A A IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 12A A VDS= 104V ,VGS=0V VDS = 104V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 18A VDS = 65V VDD = 65V, ID = 18A, VGS =12V, RG = 7.5 ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 965 300 20 -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 18* 72 1.2 200 1.5 Test Conditions A V nS C Tj = 25C, IS = 18A, VGS = 0V A Tj = 25C, IF = 18A, di/dt 100A/s VDD 25V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units -- -- -- -- 1.67 80 C/W Test Conditions Typical Socket Mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHY57133CMSE, JANSR2N7488T3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-257AA) Diode Forward Voltage Min 130 2.0 -- -- -- -- -- -- 100K Rads (Si) Max -- 4.5 100 -100 10 0.09 0.09 1.2 Units V nA A V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS=104V, VGS=0V VGS = 12V, ID = 12A VGS = 12V, ID = 12A VGS = 0V, ID = 18A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 130 130 130 130 130 32.5 130 130 130 100 50 28.4 130 120 30 -- -- 150 120 VDS 90 60 30 0 0 -5 -10 VGS -15 -20 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHY57133CMSE, JANSR2N7488T3 Pre-Irradiation 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 10 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1 5.0V 1 0.1 5.0V 20s PULSE WIDTH TJ = 25 C 1 10 100 0.01 0.1 VDS , Drain-to-Source Voltage (V) 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 TJ = 150 C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 18A I D , Drain-to-Source Current (A) 2.0 1.5 TJ = 25 C 1 1.0 0.5 0.1 V DS =15 50V 20s PULSE WIDTH 5 7 9 11 13 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHY57133CMSE, JANSR2N7488T3 2000 VGS , Gate-to-Source Voltage (V) 1600 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 18A VDS = 104V VDS = 65V VDS = 26V 16 C, Capacitance (pF) 1200 Ciss Coss 12 800 8 400 Crss 4 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 T J = 150C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100s 1ms 1 T J = 25C 1 Tc = 25C Tj = 150C Single Pulse 1 10 100 10ms 0.1 0.2 0.6 1.0 1.4 VGS = 0V 1.8 2.2 0.1 1000 VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHY57133CMSE, JANSR2N7488T3 Pre-Irradiation 20 LIMITED BY PACKAGE VDS VGS RD 16 ID , Drain Current (A) RG VGS Pulse Width 1 s Duty Factor 0.1 % D.U.T. + -V DD 12 8 Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 TC , Case Temperature ( C) 75 100 125 150 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHY57133CMSE, JANSR2N7488T3 140 EAS , Single Pulse Avalanche Energy (mJ) 15V 120 100 80 60 40 20 0 ID 8.0A 11.4A BOTTOM 18A TOP VDS L DRIVER RG D.U.T. IAS tp + - VDD A VGS 20V 0.01 Fig 12a. Unclamped Inductive Test Circuit 25 V(BR)DSS tp Starting TJ , Junction Temperature ( C) 50 75 100 125 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHY57133CMSE, JANSR2N7488T3 Pre-Irradiation Footnotes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 0.5 mH Peak IL = 18A, VGS = 12V A ISD 18A, di/dt 280A/s, VDD 130V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 104 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- TO-257AA A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035] 13.63 [.537] 13.39 [.527] 1 2 3 16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410] B C 15.88 [.625] 12.70 [.500] 0.71 [.028] MAX. 2.54 [.100] 2X 3X O 0.88 [.035] 0.64 [.025] CA B LEGEND 1 = DRAIN 2 = SOURCE 3 = GATE 3.05 [.120] O 0.50 [.020] NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/2004 8 www.irf.com |
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